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STP990 Semiconductor Fabrication: Technology and Metrology Gupta DC Pages: 467 Published: 1989 Format: PDF (6.8M) Price: $60  [Download Now]

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Table of Contents

Introduction
Gupta D.

The Effect of a Rotational Magnetic Field on MCZ Crystal Growing
Yamashita K., Kobayashi S., Aoki T., Kawata Y., Shiraiwa T.

Silicon Slice Fracture Analysis
Dyer L.

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor
Robinson M., Lawrence L.

Softening of Si and GaAs During Thermal Process
Suga H., Ichizawa M., Endo K., Tomizawa K.

Nucleation and Growth Kinetics of Bulk Microdefects in Heavily Doped Epitaxial Silicon Wafers
Wijaranakula W., Matlock J., Mollenkopf H.

On the Application of Calibration Data to Spreading Resistance Analysis
Berkowitz H.

Epitaxial Silicon Quality Improvement by Automatic Surface Inspection
Ruprecht D., Hellwig L., Rossi J.

Spreading Resistance Profiles in Gallium Arsenide
Mazur R., Hillard R.

High Dose Arsenic Implant for Bipolar Buried Layers
Ygartua C., Swaroop R.

Accurate Junction-Depth Measurements Using Chemical Staining
Subrahmanyan R., Massoud H., Fair R.

Use of Polysilicon Deposition in a Cold-Wall LPCVD Reactor to Determine Wafer Temperature Uniformity
Starov V., Lane L.

Dry Etching Techniques for MMIC Fabrication on GaAs
Bhardwaj J., Kiermasz A., Stephens M., Harrington S., McQuarrie A.

Dry Etching of Ion Implanted Silicon: Electrical Effects
Heddleson J., Horn M., Fonash S.

Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride
Clements L., Busse J., Mehta J.

Plasma Etching of Aluminum Alloys in BCL³/CL² Plasmas
Chen C., DeOrnellas S., Burke B.

NBS Submicron Particle Standards for Microcontamination Measurement
Lettieri T.

Particulate Cleanliness Testing of Filters and Equipment in Process Fluids
Goldsmith S., Grundelman G.

Parameters Controlling Counting Efficiency for Optical Liquid-Borne Particle Counters
Lieberman A.

A Correlation Study of Aluminum Film Wet Etch Uniformity with the Sputter Etch of Oxide Films
Dumesnil F., Bruner M., Berman M.

Crack Free and Highly Reliable Double Level Metallization Process Using Plasma Oxide and Silanol-Type Sog Layers
Iwamori T., Sakata Y., Kojima H., Yatsuda Y.

VLSI Defect Detection, Classification, and Reduction from In-Process and Post-Process Sram Inspections
Parks H., Logan C., Fahrenz C.

Advanced VLSI Isolation Technologies
Kuo Y.

Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces
Eichinger P., Rath H., Schwenke H.

Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers
Shiraiwa T., Fujino N., Sumita S., Tanizoe Y.

Process - Induced Influence on the Minority — Carrier Lifetime in Power Devices
Khanna V., Thakur D., Jasuja K., Khokle W.

The Role of Oxygen Precipitates in the Gettering of Iron in Silicon
Sinha P., Glaunsinger W.

The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique
Goldstein M., Makovsky J.

Defect, Dopant, and Device Modification using Si(Ge,B) Epitaxy
Rozgonyi G., Kola R., Bean K., Lindberg K.

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N⁺(100) Epitaxial Wafers
Wijaranakula W., Shimada S., Mollenkopf H., Matlock J., Stuber M.

Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation
Derheimer A., Takamizawa S., Matlock J., Mollenkopf H.

Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes
Borionetti G., Domenici M., Ferrero G.

Modification of Control Charts for Use in an Integrated Circuit Fabrication Environment
Friedman D.

Perkin-Elmer 544 Overlay Evaluation Using Statistical Techniques
Keller G., Waldo W., Babasick R.

Revolutionizing Semiconductor Material Specifications
Lowry R.

Economic Impact of Standards on Productivity in the Semiconductor Industry
Tassey G., Scace R., French J.

Appendix: Workshop and Panel Discussions


Author Index


Subject Index


Committee: F01
Paper ID: STP990-EB
DOI: 10.1520/STP990-EB
ISBN-EB: 978-0-8031-5107-9

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0-8031-1273-4
978-0-8031-1273-5
STP990-EB