Work Item
ASTM WK59267
New Test Method for Use of 2N1486 Silicon Bipolar Junction Transistors as Neutron Spectrum Sensors and 1-MeV(Si) Fluence Monitors
1. Scope
This test method covers the use of 2N1486 silicon bipolar transistors as 1-MeV(Si) equivalent neutron fluence sensors and as dosimetry sensors in the determination of neutron energy spectra in the 1-MeV(Si) eqv. fluence range between 1 10^10 n/cm^2 to 1 10^12 n/cm^2.Keywords
neutron dosimetry, displacement damage, neutron damage, radiation hardness, silicon transistors, spectrum sensorsRationale
This standard is needed to provide silicon displacement damage effects researchers an effective means of quantifying 1-MeV(Si) eqv. neutron fluence in circumstances where other means are not practical at an increased sensitivity to neutron fluence when compared with the existing standard test method: E1855-15 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors.
Work Item Status
Date Initiated: 06-05-2017
Technical Contact: Andrew Tonigan
Item: 000
Ballot:
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